Paper Title:
Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification
  Abstract

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Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
973-976
DOI
10.4028/www.scientific.net/MSF.264-268.973
Citation
F. Schwierz, M. Roschke, J.J. Liou, G. Paasch, "Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification", Materials Science Forum, Vols. 264-268, pp. 973-976, 1998
Online since
February 1998
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Price
$32.00
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