Paper Title:
On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
981-984
DOI
10.4028/www.scientific.net/MSF.264-268.981
Citation
M. Sadeghi, B. Liss, E. Ö. Sveinbjörnsson, O. Engström, "On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium", Materials Science Forum, Vols. 264-268, pp. 981-984, 1998
Online since
February 1998
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Price
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