1400 V 4H-SiC Power MOSFETs |
| Journal |
Materials Science Forum (Volumes 264 - 268) |
| Volume |
Silicon Carbide, III-Nitrides and Related Materials |
| Edited by |
G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Pages |
989-992 |
| DOI |
10.4028/www.scientific.net/MSF.264-268.989 |
| Citation |
Anant K. Agarwal et al., 1998, Materials Science Forum, 264-268, 989 |
| Online since |
February, 1998 |
| Authors |
Anant K. Agarwal, Jeff B. Casady, L.B. Rowland, W.F. Valek, C.D. Brandt |
| Keywords |
High Voltage, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Power Device, UMOS |
| Full Paper |
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