Paper Title:
Inversion Layer Mobility in SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 264-268)
Edited by
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages
997-1000
DOI
10.4028/www.scientific.net/MSF.264-268.997
Citation
S. Sridevan, B.J. Baliga, "Inversion Layer Mobility in SiC MOSFETs", Materials Science Forum, Vols. 264-268, pp. 997-1000, 1998
Online since
February 1998
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Price
$32.00
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