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Silicon Carbide, III-Nitrides and Related Materials

Materials Science Forum Volumes 264 - 268

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• p1193 Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN   [ 266 K ]
  Authors: U. Birkle, C. Thomas, M. Fehrer, S. Einfeldt, H. Heinke, D. Hommel
• p1197 Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy Study   [ 197 K ]
  Authors: J.L.F. da Silva, R. Enderlein, L.M.R. Scolfaro, J.R. Leite, A. Tabata, K. Lischka, D. Schikora, Friedhelm Bechstedt
• p1201 Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy   [ 241 K ]
  Authors: F. Hamdani, M. Yeadon, David John Smith, H. Tang, W. Kim, A. Salvador, A.E. Botchkarev, J. Murray Gibson, Hadis Morkoç
• p1205 Low Temperature Growth of Gallium Nitride on Quartz and Sapphire Substrates   [ 267 K ]
  Authors: E.M. Goldys, M.J. Paterson, H.Y. Zuo, T.L. Tansley
• p1209 STM Observation of Initial Nitridation Process of Ga on Si Substrates   [ 402 K ]
  Authors: Y. Nakada, Hajime Okumura
• p1213 Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers   [ 219 K ]
  Authors: Atsushi Yamamoto, T. Shin-ya, Y. Yamauchi, A. Hashimoto
• p1217 Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates   [ 184 K ]
  Authors: T.S. Cheng, C.T. Foxon, N.J. Jeffs, D.J. Dewsnip, L.B. Flannery, J.W. Orton, I. Harrison, S.V. Novikov, B.Ya. Ber, Yu.A. Kudriavtsev
• p1221 MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures   [ 264 K ]
  Authors: Akira Yoshikawa, Zuo Xiang Qin, H. Nagano, Y. Sugure, A.W. Jia, M. Kobayashi, Y. Kato, Kazuhiko Takahashi
• p1225 Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films   [ 232 K ]
  Authors: Sukkaneste Tungasmita, Jens Birch, L. Hultman, Erik Janzén, J.-E. Sundgren
• p1229 Magnetron Sputter Epitaxy of Gallium Nitride on (0001) Sapphire   [ 239 K ]
  Authors: J.B. Webb, D. Northcott, S. Charbonneau, Fan Yang, D.J. Lockwood, O. Malvezin, P. Singh, John Corbett
• p1235 Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy   [ 287 K ]
  Authors: B. Yang, O. Brandt, Y.G. Zhang, A.Z. Li, B. Jenichen, G. Paris, K. Ploog
• p1239 Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition   [ 375 K ]
  Authors: W.L. Zhou, P. Pirouz, F. Namavar, P.C. Colter, Murugesu Yoganathan, M.W. Leksono, J.I. Pankove
• p1243 AlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiC   [ 203 K ]
  Authors: Kenneth A. Jones, K. Xie, D.W. Eckart, M.C. Wood, V. Talyansky, R.D. Vispute, T. Venkatesan, K. Wongchotigul, Michael G. Spencer
• p1247 The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates   [ 425 K ]
  Authors: Gerard Nouet, Philippe Vermaut, V. Potin, Piere Ruterana, A. Salvador, Hadis Morkoç
• p1251 Surface Defects in GaN and Al_xGa_1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy   [ 339 K ]
  Authors: Min Chul Shin, A.Y. Polyakov, Marek Skowronski, Gregory S. Rohrer, R.G. Wilson