HOME CONTACT My eBook

Username: Password:

> @scientific.net

Silicon Carbide, III-Nitrides and Related Materials

Materials Science Forum Volumes 264 - 268

• Papers
• Abstracts
• buy eBook

• p127 Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor   [ 208 K ]
  Authors: Frank Wischmeyer, D. Leidich, E. Niemann
• p131 Growth of 4H and 6H SiC Trenches and Around Stripe Mesas   [ 222 K ]
  Authors: Nils Nordell, S. Karlsson, Andrey O. Konstantinov
• p135 Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth   [ 331 K ]
  Authors: Kai Christiansen, T. Dalibor, Reinhard Helbig, S. Christiansen, Horst P. Strunk
• p139 Epitaxial Growth of SiC on α-SiC Using Si₂Cl₆+C₃H₈+H₂ System   [ 325 K ]
  Authors: Shigehiro Nishino, Toshiyuki Miyanagi, Y. Nishio
• p143 High Growth Rate of α-SiC by Sublimation Epitaxy   [ 424 K ]
  Authors: Mikael Syväjärvi, Rositza Yakimova, Mike F. MacMillan, M. Tuominen, A. Kakanakova-Georgieva, Carl G. Hemmingsson, Ivan G. Ivanov, Erik Janzén
• p147 The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique   [ 218 K ]
  Authors: A. Kakanakova-Georgieva, Mike F. MacMillan, Shigehiro Nishino, Rositza Yakimova, Erik Janzén
• p151 Domain Occurance in SiC Epitaxial Layers Grown by Sublimation   [ 227 K ]
  Authors: M. Tuominen, Rositza Yakimova, A. Kakanakova-Georgieva, Mike F. MacMillan, Mikael Syväjärvi, Erik Janzén
• p155 Epitaxy of High Quality SiC Layers by CST   [ 283 K ]
  Authors: Takeru Yoshida, Y. Nishio, S.K. Lilov, Shigehiro Nishino
• p159 Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC   [ 236 K ]
  Authors: Rositza Yakimova, Mikael Syväjärvi, Erik Janzén
• p163 High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy   [ 225 K ]
  Authors: S.V. Rendakova, V. Ivantsov, Vladimir Dmitriev
• p167 Thick Film SiC Epitaxy for 'Filling Up' Micropipes   [ 326 K ]
  Authors: I.I. Khlebnikov, V. Madangarli, M.A. Khan, Tangali S. Sudarshan
• p171 A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy   [ 221 K ]
  Authors: H. Möller, W. Legner, G. Krötz
• p175 Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane   [ 209 K ]
  Authors: Kyung Won Lee, K.-S. Yu, Joon Woo Bae, Y. Kim
• p179 Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature Dependence   [ 213 K ]
  Authors: Chien-Hung Wu, A.J. Fleischman, Christian A. Zorman, Mehran Mehregany
• p183 CVD Growth Mechanism of 3C-SiC on Si Substrates   [ 358 K ]
  Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida, Toshihiro Sekigawa