Silicon Carbide, III-Nitrides and Related Materials
| Paper Title | Page |
|---|---|
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Authors: V.D. Heydemann, Gregory S. Rohrer, Edward M. Sanchez, Marek Skowronski |
37 |
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Defect Formation Mechanism of Bulk SiC Authors: Makato Sasaki, Y. Nishio, Shigehiro Nishino, Shinichi Nakashima, Hiroshi Harima |
41 |
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Enlargement of SiC Crystals: Defect Formation at the Interfaces Authors: Mikhail Anikin, Michel Pons, K. Chourou, O. Chaix-Pluchery, Jean Marie Bluet, V. Lauer, R. Pons |
45 |
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Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC Authors: Noboru Ohtani, Masakazu Katsuno, J. Takahashi, Hirokatsu Yashiro, M. Kanaya, S. Shinoyama |
49 |
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Optically Transparent 6H-Silicon Carbide Authors: Andrey Bakin, Sergey I. Dorozhkin, A.S. Zubrilov, N.I. Kuznetsov, Yuri M. Tairov |
53 |
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Authors: Stephan G. Müller, Robert Eckstein, Dieter Hofmann, L. Kadinski, P. Kaufmann, M. Kölbl, Erwin Schmitt |
57 |
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Authors: Yu.E. Egorov, A.O. Galyukov, S.G. Gurevich, Yuri N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, A.N. Vorob'ev, A.I. Zhmakin |
61 |
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A Coupled Finite Element Model for the Sublimation Growth of SiC Authors: P. Råback, Risto M. Nieminen, Rositza Yakimova, M. Tuominen, Erik Janzén |
65 |
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Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth Authors: M. Müller, Matthias Bickermann, Dieter Hofmann, Arnd Dietrich Weber, Albrecht Winnacker |
69 |
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Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions Authors: V. Ivantsov, Vladimir Dmitriev |
73 |