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Silicon Carbide, III-Nitrides and Related Materials

Materials Science Forum Volumes 264 - 268

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• p1445 Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates   [ 198 K ]
  Authors: Remis Gaska, Michael S. Shur, J.W. Yang, A. Osinsky, A.O. Orlov, G.L. Snider
• p1449 Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures   [ 230 K ]
  Authors: W. Walukiewicz, L. Hsu, Eugene E. Haller
• p1455 Annealed Si_1-xC_x Emitter Silicon Heterojunction Bipolar Transistors   [ 124 K ]
  Authors: R. Alcubilla, D. Bardés, A. Orpella, J. Calderer, L.F. Marsal, J. Pallarès, X. Correiga
• p1459 Ultraviolet Excitonic Laser Action at Room Temperature in ZnO Nanocrystalline Epitaxial Films   [ 219 K ]
  Authors: Megumi Kawasaki, A. Ohtomo, H. Koinuma, Yoji Sakurai, Yoichi Yoshida, Z.K. Tang, P. Yu, G.K.L. Wang, Y. Segawa
• p1463 Double Heterostructure Based on ZnO and Mg_xZn_1-xO   [ 156 K ]
  Authors: A. Ohtomo, Megumi Kawasaki, T. Koida, H. Koinuma, Yoji Sakurai, Yoichi Yoshida, M. Sumiya, Shunro Fuke, Tadashi Yasuda, Y. Segawa