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Silicon Carbide, III-Nitrides and Related Materials

Materials Science Forum Volumes 264 - 268

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• p375 High Resolution Photoemission Study of the 6H-SiC/SiO₂ Interface   [ 226 K ]
  Authors: B. Mattern, M. Bassler, Gerhard Pensl, Lothar Ley
• p379 Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the β-SiC(001) c(4x2) Surface   [ 358 K ]
  Authors: L. Douillard, F. Semond, V.Yu. Aristov, P. Soukiassian, Bernard Delley, A. Mayne, G. Dujardin, E. Wimmer
• p383 Angle-Resolved Photoemission Study of the β-SiC(100)-(2x1)-Surface   [ 200 K ]
  Authors: H. Hüsken, Bernd Schröter, W. Richter, P. Käckell, Friedhelm Bechstedt
• p387 Self-Organized One-Dimensional Si Atomic Chains on Cubic Silicon Carbide Surface   [ 487 K ]
  Authors: F. Semond, V.Yu. Aristov, L. Douillard, O. Fauchoux, P. Soukiassian, A. Mayne, G. Dujardin
• p391 High Resolution Photoemission Spectroscopy Using Synchrotron Radiation Study of the SiO₂/β-SiC(100)3x2 Interface Composition   [ 226 K ]
  Authors: D. Dunham, P. Soukiassian, J.D. Denlinger, B.P. Tonner, E. Rothenberg
• p395 Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface   [ 190 K ]
  Authors: Jean Marie Bluet, L.A. Falkovsky, N. Planes, Jean Camassel
• p399 Extended Defects in SiC and GaN Semiconductors   [ 744 K ]
  Authors: P. Pirouz
• p409 Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces   [ 579 K ]
  Authors: J. Stoemenos, Lea Di Cioccio, V. Papaioannou, D. David, C. Pudda
• p413 Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC   [ 422 K ]
  Authors: P.O.Å. Persson, Qamar-ul Wahab, L. Hultman, Nils Nordell, Adolf Schöner, K. Rottner, E. Olsson, Margareta K. Linnarsson
• p417 The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers   [ 304 K ]
  Authors: W.L. Zhou, P. Pirouz, J. Anthony Powell
• p421 Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals   [ 437 K ]
  Authors: J. Anthony Powell, David J. Larkin, Andrew J. Trunek
• p425 Equilibrium Growth Morphologies of SiC Polytypes   [ 304 K ]
  Authors: Stephan G. Müller, Robert Eckstein, R.F.P. Grimbergen, Dieter Hofmann, B. Rexer
• p429 Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals   [ 419 K ]
  Authors: W. Si, Michael Dudley, R.C. Glass, Calvin H. Carter Jr., Valeri F. Tsvetkov
• p433 Structural Characterization of SiC Crystals Grown by Physical Vapor Transport   [ 371 K ]
  Authors: Edward M. Sanchez, V.D. Heydemann, Gregory S. Rohrer, Marek Skowronski, J. Solomon, Michael A. Capano, W.C. Mitchel
• p437 Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray Diffraction   [ 171 K ]
  Authors: Henry Romanus, G. Teichert, Lothar Spieß