Modeling of Growth Processes in Epitaxial Reactors |
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| Journal | Materials Science Forum (Volumes 276 - 277) |
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| Volume | Theoretical and Technological Aspects of Crystal Growth |
| Edited by | R. Fornari and C. Paorici |
| Pages | 135-152 |
| DOI | 10.4028/www.scientific.net/MSF.276-277.135 |
| Authors | S. Carrà, C. Cavallotti, Maurizio Masi |
| Keywords | Chemical Vapor Deposition, Epitaxy, Low-Pressure CVD, Mathematical Model, MOCVD, Plasma Enhanced Chemical Vapour Deposition, Surface Kinetics |
| Full Paper | 
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