Modeling of Growth Processes in Epitaxial Reactors |
| Journal |
Materials Science Forum (Volumes 276 - 277) |
| Volume |
Theoretical and Technological Aspects of Crystal Growth |
| Edited by |
R. Fornari and C. Paorici |
| Pages |
135-152 |
| DOI |
10.4028/www.scientific.net/MSF.276-277.135 |
| Citation |
S. Carrà et al., 1998, Materials Science Forum, 276-277, 135 |
| Authors |
S. Carrà, C. Cavallotti, Maurizio Masi |
| Keywords |
Chemical Vapour Deposition (CVD), Epitaxy, Low-Pressure CVD, Mathematical Model, MOCVD, Plasma Enhanced Chemical Vapour Deposition, Surface Kinetics |
| Full Paper |
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