Paper Title:
In-Situ Control of Stoichiometry in Room Temperature MBE-Growth of ZrO2 Thin Films Using a Novel Hyperthermal Oxygen Atom Source
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 287-288)
Edited by
Horst Hoffmann
Pages
181-184
DOI
10.4028/www.scientific.net/MSF.287-288.181
Citation
E. Wisotzki, H. Hahn, G.B. Hoflund, "In-Situ Control of Stoichiometry in Room Temperature MBE-Growth of ZrO2 Thin Films Using a Novel Hyperthermal Oxygen Atom Source", Materials Science Forum, Vols. 287-288, pp. 181-184, 1998
Online since
August 1998
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.