Paper Title:
Grain Boundary Structure and Chemical Bonding in Boron Doped Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 294-296)
Edited by
Pavel Lejcek and Václav Paidar
Pages
301-304
DOI
10.4028/www.scientific.net/MSF.294-296.301
Citation
H. Gu, "Grain Boundary Structure and Chemical Bonding in Boron Doped Silicon Carbide", Materials Science Forum, Vols. 294-296, pp. 301-304, 1999
Online since
November 1998
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Price
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