Paper Title:
Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 294-296)
Edited by
Pavel Lejcek and Václav Paidar
Pages
341-344
DOI
10.4028/www.scientific.net/MSF.294-296.341
Citation
H. Takagi, R. Maeda, N. Hosoda, T. Suga, "Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation", Materials Science Forum, Vols. 294-296, pp. 341-344, 1999
Online since
November 1998
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Price
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