High-Speed Switching of Double-Barrier Resonant-Tunneling Light-Emitting Diodes Investigated by Picosecond Electroluminescence Measurements |
| Journal |
Materials Science Forum (Volumes 297 - 298) |
| Volume |
Ultrafast Phenomena in Semiconductors |
| Edited by |
Steponas Asmontas and Adolfas Dargys |
| Pages |
29-32 |
| DOI |
10.4028/www.scientific.net/MSF.297-298.29 |
| Citation |
I. Romandić et al., 1998, Materials Science Forum, 297-298, 29 |
| Authors |
I. Romandić, N. Žurauskienė, E. Goovaerts, C. Van Hoof, G. Borghs |
| Keywords |
Resonant Tunneling, Time-Resolved Electroluminescence, Ultra-Fast Light Emitters |
| Full Paper |
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