Paper Title:

Carrier Capture to Deep Levels in Semi-Insulating InP and GaInP

Periodical Materials Science Forum (Volumes 297 - 298)
Main Theme Ultrafast Phenomena in Semiconductors
Edited by Steponas Asmontas and Adolfas Dargys
Pages 291-294
DOI 10.4028/www.scientific.net/MSF.297-298.291
Citation Stanislovas Marcinkevičius et al., 1998, Materials Science Forum, 297-298, 291
Authors Stanislovas Marcinkevičius, A. Čėsna, D. Söderström, S. Lourdudoss
Keywords Capture Cross-Section, Fe Impurity, III-V Compounds, Photoluminescence Transients
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