Quantum Transport and Minimum Switching Voltage in a Field-Effect Transistor |
|
| Journal | Materials Science Forum (Volumes 297 - 298) |
|---|---|
| Volume | Ultrafast Phenomena in Semiconductors |
| Edited by | Steponas Asmontas and Adolfas Dargys |
| Pages | 3-10 |
| DOI | 10.4028/www.scientific.net/MSF.297-298.3 |
| Citation | Magnus Willander et al., 1998, Materials Science Forum, 297-298, 3 |
| Authors | Magnus Willander, Ying Fu, O. Nilsson |
| Keywords | I-V Characteristic, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Minimum Switching Voltage, Quantum Kinetic Wave Transport |
| Full Paper | 
Get the full paper by clicking here
|
First page example
