Paper Title:
Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 297-298)
Edited by
Steponas Asmontas and Adolfas Dargys
Pages
53-58
DOI
10.4028/www.scientific.net/MSF.297-298.53
Citation
M.S. Kagan, E.G. Landsberg, N. Zhdanova, "Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities", Materials Science Forum, Vols. 297-298, pp. 53-58, 1999
Online since
December 1998
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Price
$32.00
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