Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities |
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| Journal | Materials Science Forum (Volumes 297 - 298) |
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| Volume | Ultrafast Phenomena in Semiconductors |
| Edited by | Steponas Asmontas and Adolfas Dargys |
| Pages | 53-58 |
| DOI | 10.4028/www.scientific.net/MSF.297-298.53 |
| Citation | M.S. Kagan et al., 1998, Materials Science Forum, 297-298, 53 |
| Authors | M.S. Kagan, E.G. Landsberg, Natalia Zhdanova |
| Keywords | Localization, Magnetoresistivity MR, Mobility Edge, Quantum Corrections to the Conductivity |
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