Paper Title:
TEM In-Situ Observation of SiO2 Doped TZP at High Temperatures
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 304-306)
Edited by
T. Sakuma, T. Aizawa, K. Higashi
Pages
525-530
DOI
10.4028/www.scientific.net/MSF.304-306.525
Citation
Y. Ikuhara, Y. Nagai, T. Yamamoto, T. Sakuma, "TEM In-Situ Observation of SiO2 Doped TZP at High Temperatures", Materials Science Forum, Vols. 304-306, pp. 525-530, 1999
Online since
February 1999
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.