Paper Title:
Thermoelectric Properties of Sintered SiC Doped with Ge
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 308-311)
Edited by
W.A. Kaysser
Pages
659-664
DOI
10.4028/www.scientific.net/MSF.308-311.659
Citation
H. Inai, Y. Okamoto, J. Morimoto, "Thermoelectric Properties of Sintered SiC Doped with Ge", Materials Science Forum, Vols. 308-311, pp. 659-664, 1999
Online since
May 1999
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Price
$32.00
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