Main Theme:

Silicon Carbide and Related Materials - 1999

Volumes 338 - 342
doi: 10.4028/www.scientific.net/MSF.338-342
Paper Titles published in this Main Theme:
Paper Title Page

Committees and Sponsors

4

Preface

7

Overview

8

Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications

Authors: H. McD. Hobgood, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Valeri F. Tsvetkov, Calvin H. Carter Jr.

3

Large Diameter PVT Growth of Bulk 6H SiC Crystals

Authors: David Snyder, V.D. Heydemann, W.J. Everson, Donovan L. Barrett

9

Progress in SiC Bulk Growth

Authors: Mikhail Anikin, O. Chaix-Pluchery, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Philippe Grosse, Christian Faure, Y. Grange, Gérard Basset, Cécile Moulin, Roland Madar

13

Generation and Properties of Semi-Insulating SiC Substrates

Authors: Shao Ping Wang, Adrian R. Powell, Joan M. Redwing, Eddie Piner, Adam W. Saxler

17

Vanadium-free Semi-insulating 4H-SiC Substrates

Authors: W.C. Mitchel, Adam W. Saxler, Ronald Perrin, Jonathan Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M.F. Brady, Valeri F. Tsvetkov, Calvin H. Carter Jr.

21

Numerical Simulation of SiC Boule Growth by Sublimation

Authors: Roland Madar, Michel Pons, Jean Marc Dedulle, Elisabeth Blanquet, Alexander Pisch, Philippe Grosse, Christian Faure, Mikhail Anikin, Claude Bernard

25

Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth

Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Dieter Hofmann, Peter Wellmann

31

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