Silicon Carbide and Related Materials - 1999
Materials Science Forum Volumes 338 - 342
doi:10.4028/www.scientific.net/MSF.338-342
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p4
Committees and Sponsors
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43 K
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p7
Preface
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18 K
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p8
Overview
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26 K
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p3
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
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393 K
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Authors: H. McD. Hobgood, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Valeri F. Tsvetkov, Calvin H. Carter Jr.
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p9
Large Diameter PVT Growth of Bulk 6H SiC Crystals
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364 K
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Authors: David W. Snyder, V.D. Heydemann, W.J. Everson, Donovan L. Barrett
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p13
Progress in SiC Bulk Growth
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481 K
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Authors: Mikhail Anikin, O. Chaix-Pluchery, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Philippe Grosse, Christian Faure, Y. Grange, Gérard Basset, Cécile Moulin, Roland Madar
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p17
Generation and Properties of Semi-Insulating SiC Substrates
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166 K
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Authors: Shao Ping Wang, Adrian R. Powell, Joan M. Redwing, Eddie Piner, Adam W. Saxler
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p21
Vanadium-free Semi-insulating 4H-SiC Substrates
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180 K
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Authors: W.C. Mitchel, Adam W. Saxler, Ronald Perrin, Jonathan Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M.F. Brady, Valeri F. Tsvetkov, Calvin H. Carter Jr.
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p25
Numerical Simulation of SiC Boule Growth by Sublimation
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323 K
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Authors: Roland Madar, Michel Pons, Jean Marc Dedulle, Elisabeth Blanquet, Alexander Pisch, Philippe Grosse, Christian Faure, Mikhail Anikin, Claude Bernard
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p31
Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
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218 K
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Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Dieter Hofmann, Peter J. Wellmann
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p35
An Analytical Study of the SiC Growth Process from Vapor Phase
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238 K
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Authors: Dimitri I. Cherednichenko, Yuri I. Khlebnikov, I.I. Khlebnikov, Stanislav I. Soloviev, Tangali S. Sudarshan
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p39
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
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183 K
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Authors: Thomas L. Straubinger, Matthias Bickermann, M. Grau, Dieter Hofmann, L. Kadinski, Stephan G. Müller, M. Selder, Peter J. Wellmann, Albrecht Winnacker
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p43
Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth
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330 K
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Authors: Stephan G. Müller, J. Fricke, Dieter Hofmann, R. Horn, O. Nilsson, B. Rexer
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p47
Seed Surface Preparation for SiC Sublimation Growth
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328 K
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Authors: Bernard Pelissier, Cécile Moulin, Etienne Pernot, Mikhail Anikin, Philippe Grosse, Christian Faure, Bernard Ferrand, M. Couchaud, Gérard Basset, Roland Madar
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p51
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
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286 K
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Authors: Sohei Okada, Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino