Silicon Carbide and Related Materials - 1999
| Paper Title | Page |
|---|---|
|
|
4 |
|
|
7 |
|
|
8 |
|
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications Authors: H. McD. Hobgood, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Valeri F. Tsvetkov, Calvin H. Carter Jr. |
3 |
|
Large Diameter PVT Growth of Bulk 6H SiC Crystals Authors: David Snyder, V.D. Heydemann, W.J. Everson, Donovan L. Barrett |
9 |
|
Authors: Mikhail Anikin, O. Chaix-Pluchery, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Philippe Grosse, Christian Faure, Y. Grange, Gérard Basset, Cécile Moulin, Roland Madar |
13 |
|
Generation and Properties of Semi-Insulating SiC Substrates Authors: Shao Ping Wang, Adrian R. Powell, Joan M. Redwing, Eddie Piner, Adam W. Saxler |
17 |
|
Vanadium-free Semi-insulating 4H-SiC Substrates Authors: W.C. Mitchel, Adam W. Saxler, Ronald Perrin, Jonathan Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M.F. Brady, Valeri F. Tsvetkov, Calvin H. Carter Jr. |
21 |
|
Numerical Simulation of SiC Boule Growth by Sublimation Authors: Roland Madar, Michel Pons, Jean Marc Dedulle, Elisabeth Blanquet, Alexander Pisch, Philippe Grosse, Christian Faure, Mikhail Anikin, Claude Bernard |
25 |
|
Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Dieter Hofmann, Peter Wellmann |
31 |