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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p4 Committees and Sponsors   [ 43 K ]
• p7 Preface   [ 18 K ]
• p8 Overview   [ 26 K ]
• p3 Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications   [ 393 K ]
  Authors: H. McD. Hobgood, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Valeri F. Tsvetkov, Calvin H. Carter Jr.
• p9 Large Diameter PVT Growth of Bulk 6H SiC Crystals   [ 364 K ]
  Authors: David W. Snyder, V.D. Heydemann, W.J. Everson, Donovan L. Barrett
• p13 Progress in SiC Bulk Growth   [ 481 K ]
  Authors: Mikhail Anikin, O. Chaix-Pluchery, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Philippe Grosse, Christian Faure, Y. Grange, Gérard Basset, Cécile Moulin, Roland Madar
• p17 Generation and Properties of Semi-Insulating SiC Substrates   [ 166 K ]
  Authors: Shao Ping Wang, Adrian R. Powell, Joan M. Redwing, Eddie Piner, Adam W. Saxler
• p21 Vanadium-free Semi-insulating 4H-SiC Substrates   [ 180 K ]
  Authors: W.C. Mitchel, Adam W. Saxler, Ronald Perrin, Jonathan Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M.F. Brady, Valeri F. Tsvetkov, Calvin H. Carter Jr.
• p25 Numerical Simulation of SiC Boule Growth by Sublimation   [ 323 K ]
  Authors: Roland Madar, Michel Pons, Jean Marc Dedulle, Elisabeth Blanquet, Alexander Pisch, Philippe Grosse, Christian Faure, Mikhail Anikin, Claude Bernard
• p31 Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth   [ 218 K ]
  Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Dieter Hofmann, Peter J. Wellmann
• p35 An Analytical Study of the SiC Growth Process from Vapor Phase   [ 238 K ]
  Authors: Dimitri I. Cherednichenko, Yuri I. Khlebnikov, I.I. Khlebnikov, Stanislav I. Soloviev, Tangali S. Sudarshan
• p39 Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions   [ 183 K ]
  Authors: Thomas L. Straubinger, Matthias Bickermann, M. Grau, Dieter Hofmann, L. Kadinski, Stephan G. Müller, M. Selder, Peter J. Wellmann, Albrecht Winnacker
• p43 Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth   [ 330 K ]
  Authors: Stephan G. Müller, J. Fricke, Dieter Hofmann, R. Horn, O. Nilsson, B. Rexer
• p47 Seed Surface Preparation for SiC Sublimation Growth   [ 328 K ]
  Authors: Bernard Pelissier, Cécile Moulin, Etienne Pernot, Mikhail Anikin, Philippe Grosse, Christian Faure, Bernard Ferrand, M. Couchaud, Gérard Basset, Roland Madar
• p51 Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method   [ 286 K ]
  Authors: Sohei Okada, Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino