Paper Title:
A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures
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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1001-1004
DOI
10.4028/www.scientific.net/MSF.338-342.1001
Citation
T. Jang, G. Rutsch, B. Odekirk, L.M. Porter, "A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures", Materials Science Forum, Vols. 338-342, pp. 1001-1004, 2000
Online since
May 2000
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