Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1029-1032 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1029 |
| Citation |
B.J. Skromme et al., 2000, Materials Science Forum, 338-342, 1029 |
| Authors |
B.J. Skromme, E. Luckowski, K. Moore, S. Clemens, D. Resnick, T. Gehoski, D. Ganser |
| Keywords |
Annealing, Barrier Height, Fermi Level Pinning, Ideality, Leakage Current, Nickel Ni, Platinum, Reactive Ion Etching, Schottky Barrier, Titanium (Ti) |
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