Paper Title:
Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1029-1032
DOI
10.4028/www.scientific.net/MSF.338-342.1029
Citation
B.J. Skromme, E. Luckowski, K. Moore, S. Clemens, D. Resnick, T. Gehoski, D. Ganser, "Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC", Materials Science Forum, Vols. 338-342, pp. 1029-1032, 2000
Online since
May 2000
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Price
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