Paper Title:
Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1037-1040
DOI
10.4028/www.scientific.net/MSF.338-342.1037
Citation
K. Masahara, Y. Ishida, H. Okumura, T. Takahashi, M. Kushibe, T. Ohno, T. Suzuki, T. Tanaka, S. Yoshida, K. Arai, "Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure", Materials Science Forum, Vols. 338-342, pp. 1037-1040, May. 2000
Price
US$ 28,-
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