Paper Title:
Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
| Periodical |
Materials Science Forum (Volumes 338 - 342)
|
| Main Theme |
Silicon Carbide and Related Materials - 1999
|
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1037-1040 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1037 |
| Citation |
Koh Masahara et al., 2000, Materials Science Forum, 338-342, 1037 |
| Authors |
Koh Masahara, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai |
| Keywords |
Hydrogen Etching, Pressure Dependence, Surface Morphology |
| Price |
US$ 28,- |