Paper Title:

Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure

Periodical Materials Science Forum (Volumes 338 - 342)
Main Theme Silicon Carbide and Related Materials - 1999
Edited by Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages 1037-1040
DOI 10.4028/www.scientific.net/MSF.338-342.1037
Citation Koh Masahara et al., 2000, Materials Science Forum, 338-342, 1037
Authors Koh Masahara, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
Keywords Hydrogen Etching, Pressure Dependence, Surface Morphology
Price US$ 28,-
Article Preview
View full size