Paper Title:
Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1049-1052
DOI
10.4028/www.scientific.net/MSF.338-342.1049
Citation
E. Danielsson, C. M. Zetterling, M. Östling, S. K. Lee, K. J. Linthicum, D.B. Thomson, O.H. Nam, R. F. Davis, "Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process", Materials Science Forum, Vols. 338-342, pp. 1049-1052, 2000
Online since
May 2000
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Price
$32.00
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