Paper Title:
Reactive Ion Etching in CF4 / O2 Gas Mixtures for Fabricating SiC Devices
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1057-1060
DOI
10.4028/www.scientific.net/MSF.338-342.1057
Citation
M. Imaizumi, Y. Tarui, H. Sugimoto, J. Tanimura, T. Takami, T. Ozeki, "Reactive Ion Etching in CF4 / O2 Gas Mixtures for Fabricating SiC Devices", Materials Science Forum, Vols. 338-342, pp. 1057-1060, 2000
Online since
May 2000
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