Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1065-1068 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1065 |
| Citation |
M. Bassler et al., 2000, Materials Science Forum, 338-342, 1065 |
| Authors |
M. Bassler, Valeri V. Afanas'ev, Gerhard Pensl, M. Schulz |
| Keywords |
4H-SiC, 6H-SiC, Admittance Spectroscopy, MOS, Near-interface Traps |
| Full Paper |
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