Paper Title:
Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1065-1068
DOI
10.4028/www.scientific.net/MSF.338-342.1065
Citation
M. Bassler, V. V. Afanas'ev, G. Pensl, M. Schulz, "Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility", Materials Science Forum, Vols. 338-342, pp. 1065-1068, 2000
Online since
May 2000
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Price
$32.00
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