Paper Title:
Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1069-1072
DOI
10.4028/www.scientific.net/MSF.338-342.1069
Citation
M. K. Das, B. S. Um, J. A. Cooper, "Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices", Materials Science Forum, Vols. 338-342, pp. 1069-1072, 2000
Online since
May 2000
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