Paper Title:
Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1073-1076
DOI
10.4028/www.scientific.net/MSF.338-342.1073
Citation
S. Suzuki, K. Fukuda, H. Okushi, K. Nagai, T. Sekigawa, S. Yoshida, T. Tanaka, K. Arai, "Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface", Materials Science Forum, Vols. 338-342, pp. 1073-1076, 2000
Online since
May 2000
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Price
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