Paper Title:
Process Dependence of Inversion Layer Mobility in 4H-SiC Devices
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1077-1080
DOI
10.4028/www.scientific.net/MSF.338-342.1077
Citation
D. Alok, E. Arnold, R. Egloff, "Process Dependence of Inversion Layer Mobility in 4H-SiC Devices", Materials Science Forum, Vols. 338-342, pp. 1077-1080, 2000
Online since
May 2000
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Price
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