Paper Title:
Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1085-1088
DOI
10.4028/www.scientific.net/MSF.338-342.1085
Citation
S. Zangooie, H. Arwin, I. Lundström, A. Lloyd Spetz, "Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes", Materials Science Forum, Vols. 338-342, pp. 1085-1088, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.