Paper Title:
Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1089-1092
DOI
10.4028/www.scientific.net/MSF.338-342.1089
Citation
M. Treu, R. Schörner, P. Friedrichs, R. Rupp, A. Wiedenhofer, D. Stephani, H. Ryssel, "Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 1089-1092, 2000
Online since
May 2000
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Price
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