Paper Title:
The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1097-1100
DOI
10.4028/www.scientific.net/MSF.338-342.1097
Citation
G.Y. Chung, C. C. Tin, J.H. Won, J. R. Williams, "The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC", Materials Science Forum, Vols. 338-342, pp. 1097-1100, 2000
Online since
May 2000
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