Paper Title:
Channel Doped SiC-MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1101-1104
DOI
10.4028/www.scientific.net/MSF.338-342.1101
Citation
S. Ogino, T. Oikawa, K. Ueno, "Channel Doped SiC-MOSFETs", Materials Science Forum, Vols. 338-342, pp. 1101-1104, 2000
Online since
May 2000
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Price
$32.00
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