Paper Title:
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1105-1108
DOI
10.4028/www.scientific.net/MSF.338-342.1105
Citation
H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano, Y. Sugawara, "Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face", Materials Science Forum, Vols. 338-342, pp. 1105-1108, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.