Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1105-1108 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1105 |
| Citation |
Hiroshi Yano et al., 2000, Materials Science Forum, 338-342, 1105 |
| Authors |
Hiroshi Yano, Toshio Hirao, Tsunenobu Kimoto, Hiroyuki Matsunami, Katsunori Asano, Yoshitaka Sugawara |
| Keywords |
(11-20) Face, Anisotropy, Electron Trap, Inversion Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Scattering Mechanisms, Threshold Voltage |
| Full Paper |
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