Paper Title:
MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1109-1112
DOI
10.4028/www.scientific.net/MSF.338-342.1109
Citation
H. Yano, T. Kimoto, H. Matsunami, M. Bassler, G. Pensl, "MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation", Materials Science Forum, Vols. 338-342, pp. 1109-1112, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.