Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
111-114 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.111 |
| Citation |
Norbert Schulze et al., 2000, Materials Science Forum, 338-342, 111 |
| Authors |
Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl |
| Keywords |
15R-SiC, Boron Acceptor, Defect Centers, DLTS, Hall-Effect, Stoichiometry, Sublimation Growth |
| Full Paper |
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