Paper Title:
Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1117-1120
DOI
10.4028/www.scientific.net/MSF.338-342.1117
Citation
E. Ö. Sveinbjörnsson, M. Ahnoff, H.Ö. Ólafsson, "Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis", Materials Science Forum, Vols. 338-342, pp. 1117-1120, 2000
Online since
May 2000
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Price
$32.00
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