Paper Title:
Mobility in 6H-SiC n-Channel MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1121-1124
DOI
10.4028/www.scientific.net/MSF.338-342.1121
Citation
C. Scozzie, A. J. Lelis, F. B. McLean, "Mobility in 6H-SiC n-Channel MOSFETs", Materials Science Forum, Vols. 338-342, pp. 1121-1124, 2000
Online since
May 2000
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Price
$32.00
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