Paper Title:
Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
| Periodical |
Materials Science Forum (Volumes 338 - 342)
|
| Main Theme |
Silicon Carbide and Related Materials - 1999
|
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1129-1132 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1129 |
| Citation |
Masahito Yoshikawa et al., 2000, Materials Science Forum, 338-342, 1129 |
| Authors |
Masahito Yoshikawa, Kazutoshi Kojima, Takeshi Ohshima, Hisayoshi Itoh, Sohei Okada, Yuuki Ishida |
| Keywords |
3C-SiC, Interface States (or Traps), LP-CVD, MOS, Oxide Layers, Oxide-Trapped Charges, Pyrogenic Oxidation, Steam Annealing |
| Price |
US$ 28,- |