Paper Title:
Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1129-1132
DOI
10.4028/www.scientific.net/MSF.338-342.1129
Citation
M. Yoshikawa, K. Kojima, T. Ohshima, H. Itoh, S. Okada, Y. Ishida, "Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures", Materials Science Forum, Vols. 338-342, pp. 1129-1132, 2000
Online since
May 2000
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