Atomic-Scale Engineering of the SiC-SiO2 Interface |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1133-1136 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1133 |
| Citation |
Sokrates T. Pantelides et al., 2000, Materials Science Forum, 338-342, 1133 |
| Authors |
Sokrates T. Pantelides, G. Duscher, M. Di Ventra, Ryszard Buczko, K. McDonald, M.B. Huang, Robert A. Weller, Israel J.R. Baumvol, Fernanda Chiarello Stedile, C. Radtke, S.J. Pennycook, G.Y. Chung, Chin Che Tin, John R. Williams, J.H. Won, Leonard C. Feldman |
| Keywords |
Interface States (or Traps), Interface Structure, Nitrogen, Oxidation |
| Full Paper |
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