Paper Title:
Atomic-Scale Engineering of the SiC-SiO2 Interface
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1133-1136
DOI
10.4028/www.scientific.net/MSF.338-342.1133
Citation
S. T. Pantelides, G. Duscher, M. Di Ventra, R. Buczko, K. McDonald, M.B. Huang, R. A. Weller, I. J.R. Baumvol, F. C. Stedile, C. Radtke, S.J. Pennycook, G.Y. Chung, C. C. Tin, J. R. Williams, J.H. Won, L. C. Feldman, "Atomic-Scale Engineering of the SiC-SiO2 Interface", Materials Science Forum, Vols. 338-342, pp. 1133-1136, 2000
Online since
May 2000
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Price
$32.00
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