Paper Title:
Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1137-1140
DOI
10.4028/www.scientific.net/MSF.338-342.1137
Citation
A. J. Lelis, C. Scozzie, F. B. McLean, B. Geil, R.D. Vispute, T. Venkatesan, "Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C", Materials Science Forum, Vols. 338-342, pp. 1137-1140, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.