Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1171-1174 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1171 |
| Citation |
Qamar-ul Wahab et al., 2000, Materials Science Forum, 338-342, 1171 |
| Authors |
Qamar-ul Wahab, Alexsandre Ellison, Jie Zhang, Urban Forsberg, E. Duranova, Anne Henry, Lynnette D. Madsen, Erik Janzén |
| Keywords |
High Power Devices, Physical Simulations, Schottky Diode |
| Full Paper |
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