Paper Title:
Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1175-1178
DOI
10.4028/www.scientific.net/MSF.338-342.1175
Citation
Q. Wahab, A. Ellison, C. Hallin, A. Henry, J. Di Persio, R. Martinez, E. Janzén, "Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 338-342, pp. 1175-1178, 2000
Online since
May 2000
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Price
$32.00
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