Paper Title:
Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1191-1194
DOI
10.4028/www.scientific.net/MSF.338-342.1191
Citation
C. Sudre, M.B. Mooney, C. Leveugle, J. O'Brien, W.A. Lane, "Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques", Materials Science Forum, Vols. 338-342, pp. 1191-1194, 2000
Online since
May 2000
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