Paper Title:
Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1199-1202
DOI
10.4028/www.scientific.net/MSF.338-342.1199
Citation
D.J. Morrison, A.J. Pidduck, V. Moore, P.J. Wilding, K. P. Hilton, M. J. Uren, C. M. Johnson, "Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes", Materials Science Forum, Vols. 338-342, pp. 1199-1202, 2000
Online since
May 2000
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Price
$32.00
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