Paper Title:
4H-SiC Device Scaling Development on Repaired Micropipe Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1203-1206
DOI
10.4028/www.scientific.net/MSF.338-342.1203
Citation
T.E. Schattner, J. B. Casady, M.C.D. Smith, M. S. Mazzola, V. Dmitriev, S.V. Rentakova, S. E. Saddow, "4H-SiC Device Scaling Development on Repaired Micropipe Substrates", Materials Science Forum, Vols. 338-342, pp. 1203-1206, 2000
Online since
May 2000
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Price
$32.00
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