Paper Title:
Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant
  Abstract

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Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1211-1214
DOI
10.4028/www.scientific.net/MSF.338-342.1211
Citation
V. Khemka, K. Chatty, T. P. Chow, R. J. Gutmann, "Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant", Materials Science Forum, Vols. 338-342, pp. 1211-1214, 2000
Online since
May 2000
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Price
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