Paper Title:
6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1219-1222
DOI
10.4028/www.scientific.net/MSF.338-342.1219
Citation
G. Brezeanu, M. Badila, J. Millan, P. Godignon, M. L. Locatelli, J.-P. Chante, A. A. Lebedev, V. Banu, "6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage", Materials Science Forum, Vols. 338-342, pp. 1219-1222, 2000
Online since
May 2000
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Price
$32.00
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