Paper Title:
Computer Simulation of P-type SiC Schottky Diode using ATLAS
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1231-1234
DOI
10.4028/www.scientific.net/MSF.338-342.1231
Citation
M. Tarplee, V. Madangarli, Q. Zhang, P. Palmer, T. S. Sudarshan, "Computer Simulation of P-type SiC Schottky Diode using ATLAS", Materials Science Forum, Vols. 338-342, pp. 1231-1234, 2000
Online since
May 2000
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Price
$32.00
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