Paper Title:
Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 338-342)
Edited by
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages
1235-1238
DOI
10.4028/www.scientific.net/MSF.338-342.1235
Citation
Y. Ishida, T. Takahashi, H. Okumura, T. Sekigawa, S. Yoshida, "Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition", Materials Science Forum, Vols. 338-342, pp. 1235-1238, 2000
Online since
May 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.