Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition |
| Journal |
Materials Science Forum (Volumes 338 - 342) |
| Volume |
Silicon Carbide and Related Materials - 1999 |
| Edited by |
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer |
| Pages |
1239-1242 |
| DOI |
10.4028/www.scientific.net/MSF.338-342.1239 |
| Citation |
Kazutoshi Kojima et al., 2000, Materials Science Forum, 338-342, 1239 |
| Authors |
Kazutoshi Kojima, Masahito Yoshikawa, Takeshi Ohshima, Hisayoshi Itoh, Sohei Okada |
| Keywords |
3C-SiC, Low Pressure CVD, p-Type, Schottky Barrier Height, Schottky Contact |
| Full Paper |
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